| Electronic Components Datasheet Search |
|
BB201 Datasheet(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BB201 Datasheet(HTML) 3 Page - NXP Semiconductors |
|
3 / 8 page ![]() 2001 Oct 12 3 NXP Semiconductors Product specification Low-voltage variable capacitance double diode BB201 CHARACTERISTICS Tj =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode IR reverse current VR =15V 10 nA VR =15V; Tj =85 C 200 nA rS diode series resistance f = 100 MHz; VR =3V 0.25 0.5 Cd diode capacitance VR = 1 V; f = 1 MHz 89 95 102 pF VR =3V; f= 1MHz 60 pF VR = 7.5 V; f = 1 MHz 25.5 27.6 29.7 pF VR =8V; f= 1MHz 25.5 pF capacitance ratio f = 1 MHz 3.1 3.8 C d1V C d7.5V -------------------- GRAPHICAL DATA handbook, full pagewidth 0 140 100 120 20 40 60 80 MGU477 10−1 110 Cd (pF) VR (V) 102 Fig.2 Diode capacitance as a function of reverse voltage; typical values. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |