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IRGP4640DPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRGP4640DPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 12 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE TO-247AC IRGP4640DPbF TO-247AD IRGP4640D-EP G C E C G C E C IRGP4640DPbF IRGP4640D-EPbF www.irf.com © 2012 International Rectifier January 8, 2013 1 E G n-channel C GC E Gate Collector Emitter VCES = 600V IC = 40A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 24A Features Benefits Low VCE(ON) and Switching Losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and Maximum Junction Temperature 175°C Improved reliability due to rugged hard switching performance and higher power capability Positive VCE (ON) Temperature Coefficient Excellent current sharing in parallel operation 5μs short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Applications • Industrial Motor Drive • Inverters • UPS • Welding Form Quantity IRGP4640DPbF TO-247AC Tube 25 IRGP4640DPbF IRGP4640D-EPbF TO-247AD Tube 25 IRGP4640D-EPbF Base part number Package Type Standard Pack Orderable part number Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I C @ TC = 25°C Continuous Collector Current 65 I C @ TC = 100°C Continuous Collector Current 40 I CM Pulse Collector Current, VGE = 15V e 72 I LM Clamped Inductive Load Current, VGE = 20V c 96 A I F @ TC = 25°C Diode Continous Forward Current 65 I F @ TC = 100°C Diode Continous Forward Current 40 I FM Diode Maximum Forward Current 96 V GE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 P D @ TC = 25°C Maximum Power Dissipation 250 W P D @ TC = 100°C Maximum Power Dissipation 125 T J Operating Junction and -55 to +175 T ST G Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RJC (IGBT) Junction-to-Case (IGBT) f ––– ––– 0.60 °C/W RJC (Diode) Junction-to-Case (Diode) f ––– ––– 1.62 RCS Case-to-Sink (flat, greased surface) ––– 0.24 ––– RJA Junction-to-Ambient (typical socket mount) ––– ––– 40 |
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