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VOS628A Datasheet(PDF) 2 Page - Vishay Siliconix |
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VOS628A Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() VOS628A Series www.vishay.com Vishay Semiconductors Rev. 1.3, 27-Oct-11 2 Document Number: 83466 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Power dissipation Pdiss 100 mW Forward current IF 60 mA OUTPUT Collector emitter voltage VCE 80 V Emitter collector voltage VEC 7V Collector current IC 50 mA tp/T = 0.5, tp < 10 ms IC 100 mA Power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector VISO 3750 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 40 to + 125 °C Ambient temperature range Tamb - 40 to + 110 °C Junction temperature Tj 125 °C Soldering temperature (1) max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = ± 5 mA VF 1.16 1.5 V Capacitance VR = 0 V, f = 1 MHz CO 25 pF OUTPUT Collector emitter leakage current VCE = 10 V ICEO 10 200 nA Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 7pF COUPLER Collector emitter saturation voltage IC = 0.32 mA, IF = ± 1 mA VOS628A-2 VCEsat 0.25 0.4 V IC = 0.5 mA, IF = ± 1 mA VOS628A-3 VCEsat 0.25 0.4 V IC = 0.8 mA, IF = ± 1 mA VOS628A-4 VCEsat 0.25 0.4 V Coupling capacitance CC 0.25 pF CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF IF = ± 1 mA, VCE = 5 V VOS628A-2 CTR 63 125 % VOS628A-3 CTR 100 200 % VOS628A-4 CTR 160 320 % |
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