AMP04

REV. B

–5–

Parameter

Symbol

Conditions

Limit

Unit

G = 1000

80

dB min

Power Supply Rejection

PSRR

4.0 V

G = 1

85

dB min

G = 10

95

dB min

G = 100

95

dB min

G = 1000

95

dB min

Gain Equation Accuracy

G = 1 to 100

0.75

% max

OUTPUT

Output Voltage Swing High

Ω

4.0

V min

Output Voltage Swing Low

Ω

2.5

mV max

POWER SUPPLY

Supply Current

±15

900

µA max

700

µA max

NOTE

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard

product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±18 V

Common-Mode Input Voltage

2

. . . . . . . . . . . . . . . . . . .

±18 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite

Storage Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65

°C to +175°C

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Operating Temperature Range

AMP04A . . . . . . . . . . . . . . . . . . . . . . . . . . –55

°C to +125°C

AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40

°C to +85°C

Junction Temperature Range

Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65

°C to +175°C

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300

°C

Package Type

JA

3

JC

Unit

8-Lead Cerdip (Z)

148

16

°C/W

8-Lead Plastic DIP (P)

103

43

°C/W

8-Lead SOIC (S)

158

43

°C/W

NOTES

otherwise noted.

± 18 V, the absolute maximum input voltage is

equal to the supply voltage.

3

θ

θ

socket for cerdip, P-DIP, and LCC packages;

θ

soldered in circuit board for SOIC package.

ORDERING GUIDE

Temperature

Package

Package

Model

Range

Description

Option

AMP04EP

XIND

150

µV

Plastic DIP

N-8

AMP04ES

XIND

150

µV

SOIC

SO-8

AMP04ES-REEL7

XIND

150

µV

SOIC

SO-8

AMP04FP

XIND

300

µV

Plastic DIP

N-8

AMP04FS

XIND

300

µV

SOIC

SO-8

AMP04FS-REEL

XIND

150

µV

SOIC

SO-8

AMP04FS-REEL7

XIND

150

µV

SOIC

SO-8

AMP04GBC

25

°C

300

µV

DICE CHARACTERISTICS

1

8

7 V+

5 REF

–IN 2

+IN 3

V– 4

AMP04 Die Size 0.075

× 0.99 inch, 7,425 sq. mils.

Substrate (Die Backside) Is Connected to V+.

Transistor Count, 81.