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FZT758 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FZT758
Description  SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT758 Datasheet(HTML) 2 Page - Diodes Incorporated

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FZT758
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
Tamb=25°C
VCE(sat) v IC
I+ -
Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I+ -
Collector Current (Amps)
VBE(on) v IC
IC/IB=10
IC/IB=50
IC/IB=10
IC/IB=10
VCE=10V
300
200
100
0.001
0.001
0.001
0.001
IC/IB=20
-55°C
+25°C
+100°C
+175°C
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
VCE=10V
0.001
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100µs
1ms
1V
0.01
1000V
0.001
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – FEBRUARY 1995
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE –
FZT658
PARTMARKING DETAIL –
FZT758
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-400
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
ICBO
-100
nA
VCB=-320V
Collector Cut-Off Current
ICES
-100
nA
VCE=-320V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.30
-0.25
-0.50
V
V
V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
Base-Emitter Saturation
Voltage
VBE(sat)
-0.9
V
IC=-100mA, IB=-10mA*
Base-Emitter Turn On Voltage
VBE(on)
-1.0
V
IC=-100mA, VCE=-5V*
Static Forward Current
Transfer Ratio
hFE
50
50
40
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
Transition Frequency
fT
50
MHz
IC=-20mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
20
pF
VCB=-20V, f=1MHz
Switching times
ton
toff
140
Typical
2000 Typical
ns
ns
IC=-100mA, VCC=-100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT758
C
C
E
B
3 - 242
3 - 243



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