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BAT54C Datasheet(PDF) 1 Page - Diodes Incorporated |
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BAT54C Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page  SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1 SEPTEMBER 1995 7 FEATURES: Low V F & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 30 V Forward Current IF 200 mA Forward Voltage @ IF =10mA VF 400 mV Repetitive Peak Forward Current IFRM 300 mA Non Repetitive Forward Current t<1s IFSM 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Storage Temperature Range Tstg -55 to +150 °C JunctionTemperature ¤ Tj 125 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage V(BR)R 30 50 V IR=10µA Forward Voltage VF 135 200 280 350 530 240 320 400 500 1000 mV mV mV mV mV IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA Reverse Current IR 2.5 4 µ A VR=25V Diode Capacitance CD 7.5 10 pF f=1MHz,VR=1V Reverse Recover Time trr 5ns switched from IF=10mA to IR=10mA RL=100Ω, Measured at IR=1mA ¤ Dual Device; For simultaneous continuous use Tj=100°C. 3 2 1 3 2 1 2 3 1 3 1 BAT54 SERIES 1 3 2 BAT54 BAT54A BAT54S BAT54C Device Type SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail 30 10 20 0 +125°C +85°C TA - Ambient Temperature ( °C) PD v TA Characteristics 0 90 180 270 330 CT v VR Characteristics 0 5 10 15 0 50 100 150 Forward Voltage VF (V) IF v VF Characteristics 0 0.6 0.3 +125°C 10µ 100µ 1m 10m 100m 1 0.9 +85°C +25°C 0.15 0.45 0.75 10µ 100µ 10m 1m Reverse Voltage VR (V) IR v VR Characteristics Reverse Voltage VR (V) 020 10 30 1µ +25°C TYPICAL CHARACTERISTICS BAT54 SERIES 3 - 4 3 - 5 |
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