HUF76013P3 datasheet(4/10 Pages) FAIRCHILD

4 / 10 page

HUF76013P3, HUF76013D3S Rev. B

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

FIGURE 6. TRANSFER CHARACTERISTICS

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

Typical Performance Curves (Continued)

100

110

300

100

µs

10ms

1ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

TJ = MAX RATED TC = 25

SINGLE PULSE

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

TJ = 150

TJ = 25

TJ = -55

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 3V

VGS = 4V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VGS = 3.5V

TC = 25

VGS = 5V

VGS = 10V

ID = 5A

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

TC = 25

ID = 20A

ID = 10A

0.6

0.8

1.0

1.2

1.4

1.6

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

VGS = 10V, ID = 20A

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0.6

0.8

1.0

1.2

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

VGS = VDS, ID = 250µA

HUF76013P3, HUF76013D3S

HUF76013P3 Datasheet(PDF) 4 Page - Fairchild Semiconductor

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