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ZXGD3103N8 Datasheet(PDF) 3 Page - Diodes Incorporated |
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ZXGD3103N8 Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 12 page ![]() ZXGD3103N8 ZXGD3103N8 Document number: DS32255 Rev. 2 - 2 3 of 12 www.diodes.com November 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Electrical characteristics at TA = 25°C; VCC = 10V; RBIAS = 3.3kΩ; RREF= 4.3kΩ Parameter Symbol Conditions Min. Typ. Max. Unit Input and supply characteristics Operating current IOP VD ≤ -200m V - 2.16 - mA VD ≥ 0V - 5.16 - Gate Driver Turn-off Threshold Voltage(**) VT VG = 1V, (*) -16 -10 0 mV GATE output voltage (**) VG(off) VD ≥ 0V, (*) - 0.73 1 V VG VD = -50mV, ( ) 6.0 7.2 - VD = -100mV, ( ) 8.8 9.2 - VD ≤ -150mV, ( ) 9.2 9.4 - VD ≤ -200mV, ( ) 9.3 9.5 - Switching performance (“) for QG(tot) = 82nC Turn on Propagation delay td1 Refer to switching waveforms in Fig. 3 150 ns Turn off Propagation delay td2 15 Gate rise time tr 450 Gate fall time tf Continuous Conduction Mode 21 Discontinuous Conduction Mode 17 Notes: (**) GATEH connected to GATEL (*) RH = 100kΩ, RL = O/C ( ) RL = 100kΩ, RH = O/C (“) refer to test circuit below |
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