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VN750PSTR-E Datasheet(PDF) 9 Page - STMicroelectronics

Part # VN750PSTR-E
Description  High-side driver
PDF  27 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN750PSTR-E Datasheet(HTML) 9 Page - STMicroelectronics

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VN750PS-E
Electrical specifications
Doc ID 16782 Rev 2
9/27
IIH
High level input current
VIN =3.25V
10
µA
Vhyst
Input hysteresis voltage
0.5
V
VICL
Input clamp voltage
IIN =1mA
6
6.8
8
V
IIN =-1mA
-0.7
V
VCC output diode
VF
Forward on voltage
-IOUT = 1.3 A; Tj = 150 °C
0.6
V
Status pin
VSTAT
Status low output voltage
ISTAT =1.6 mA
0.5
V
ILSTAT
Status leakage current
Normal operation; VSTAT =5V
10
µA
CSTAT
Status pin input capacitance Normal operation; VSTAT = 5 V
100
pF
VSCL
Status clamp voltage
ISTAT =1 mA
6
6.8
8
V
ISTAT =-1 mA
-0.7
V
Protections(1)
TTSD
Shutdown temperature
150
175
200
°C
TR
Reset temperature
135
°C
Thyst
Thermal hysteresis
7
15
°C
tSDL
Status delay in overload
condition
Tj>Tjsh
20
ms
Ilim
Current limitation
9V<VCC<36 V
6
9
15
A
5V<VCC<36 V
15
A
Vdemag
Turn-off output clamp
voltage
IOUT =2A; VIN =0V;
L=6mH
VCC-41
VCC-48
VCC-55
V
Open-load detection
IOL
Open-load on-state
detection threshold
VIN = 5 V
50
200
mA
tDOL(on)
Open-load on-state
detection delay
IOUT = 0 A
200
µs
VOL
Open-load off-state voltage
detection threshold
VIN =0V
1.5
3.5
V
tDOL(off)
Open-load detection delay at
turn-off
1000
µs
1.
To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals
must be used together with a proper software strategy. If the device operates under abnormal conditions this software must
limit the duration and number of activation cycles.
Table 5.
Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit



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