9/13

BAxxJC5 Series(Fixed)

BA00JC5WT(Variable)

Datasheet

TSZ02201-0R6R0A600140-1-2

© 2012 ROHM Co., Ltd. All rights reserved.

TSZ22111･15･001

www.rohm.com

14.Feb.2012 Rev.001

Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation

conditions under the entire operating temperature range.

The power consumption Pc of the IC in the event of shorting (i.e. the Vo and GND pins are shorted) can be obtained from

the following equation: Pc = Vcc

× (Icca + Ishort) (Ishort: short current)

●Peripheral Circuit Considerations

• Vcc pin

Insert a capacitor (0.33

μF approx.) between V

The capacitance will vary depending on the application.

Use a suitable capacitance and implement designs with sufficient margins.

• GND pin

Verify that there is no potential difference between the ground of the application board and the IC.

If there is a potential difference, the set voltage will not be output accurately, resulting in unstable IC operation.

Therefore, lower the impedance by designing the ground pattern as wide and as short as possible.

• CTL terminal

The CTL terminal turns on at an operating power supply voltage of 2.0 V or higher and turns off at 0.8 V or lower.

There is no particular order when turning the power supply and CTL terminals on or off.

Fig.18 Input Equivalent Circuit

●Vo Terminal

Insert a capacitor between the Vo and GND pins in order to prevent output oscillation.

Fig.19 Output Equivalent Circuit

Fig.20 IO vs. ESR

The capacitance may vary greatly with temperature changes, thus making it impossible to completely prevent oscillation.

Therefore, use a tantalum aluminum electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will

oscillate if the ESR is too high or too low, so refer to the ESR characteristics in Fig.20 and operate the IC within the stable

region. Use a capacitor within a capacitance between 22

μF and 1,000μF.

OUT

IC

200

400

600

800

1000

0

0.05

0.075

0.1

0.2

0.5

1.0

2.0

Io [mA]

Oscillation region

Oscillation region

Stable region

10.0

31 k

Ω

2 k

Ω

27 k

Ω

CTL