EMT2 / UMT2N / IMT2A

Transistors

Rev.A

1/2

General purpose (dual transistors)

EMT2 / UMT2N / IMT2A

Features

1) Two 2SA1037AK chips in a EMT or UMT or SMT package.

Equivalent circuits

(1)

(2)

(3)

(4) (5)

(6)

(6)

(5)

(4)

(3) (2)

(1)

EMT2 / UMT2N

IMT2A

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Tj

Tstg

Limits

−60

−50

−6

−150

300(TOTAL)

150(TOTAL)

EMT2 / UMT2N

IMT2A

150

−55 to +150

Unit

V

V

V

mA

mW

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

∗1

∗2

Package, marking, and packaging specifications

EMT2

EMT6

T2

T2R

8000

IMT2A

SMT6

T2

T108

3000

UMT2N

UMT6

T2

TR

3000

Type

Package

Marking

Code

Basic ordering unit (pieces)

External dimensions (Unit : mm)

ROHM : EMT6

EMT2

ROHM : UMT6

EIAJ : SC-88

UMT2N

ROHM : SMT6

EIAJ : SC-74

IMT2A

1.2

1.6

(1)

(2)

(5)

(3)

(6)

(4)

Each lead has same dimensions

0.1Min.

2.1

1.25

Each lead has same dimensions

0.3Min.

2.8

1.6

Each lead has same dimensions

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Transition frequency

−60

−50

−6

−

−

−

120

−

−

−

−

−

−

−

−

140

−

−

−

−0.1

−0.1

−0.5

560

−

V

V

V

µA

µA

V

−

MHz

∗

Cob

−

45

pF

=−50µA

=−1mA

=−50µA

=−60V

=−6V

=−50mA/−5mA

∗Transition frequency of the device.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance