TO-220F Plastic-Encapsulate Diodes

MBRF2545CT

SCHOTTKY BARRIER RECTIFIER

FEATURES

Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

45

V

RMS Reverse Voltage

32

V

Average Rectified Output Current (Note 1)

Tc=130

℃

30

A

Peak Repetitive Reverse Surge Current (Note 3)

1.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load

(JEDEC Method)

150

A

Forward Voltage Drop

0.73

0.82

V

Peak Reverse Current

at Rated DC Blocking Voltage

0.2

40

mA

Typical Junction Capacitance (Note 2)

750

pF

Typical Thermal Resistance Junction to Case (Note 1)

1.5

℃/W

Operating and Storage Temperature Range

-

55~+125

℃

Notes: 1. Thermal resistance junction to case mounted heat sink.

2. Measured at 1.

0MHz and applied reverse voltage of 4.0V DC.

3．2.0μs pulse width, f = 1.0KHz.

TO-220F

1.ANODE

2.CATHODE

3.ANODE

A,Jun,2011

TIGER ELECTRONIC CO.,LTD