STTH12T06DI datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STTH12T06DI

Description	600 V tandem extra fast diode

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is information on a product in full production.

May 2013

Doc ID024431 Rev1

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STTH12T06

600 V tandem extra fast diode

Datasheet

− production data

Features

• High voltage rectifier

• Tandem diodes in series

• Very low switching losses

• Insulated device with internal ceramic

• Equal thermal conditions for both 300 V diodes

• Static and dynamic equilibrium of internal

diodes are warranted by design

• Insulated package:

– Capacitance: 7 pF

– Insulated voltage: 2500 V rms

Description

This device is part of ST's second generation of

600 V tandem diodes. It has ultralow switching-

losses with a minimized QRR (6.5 nC) that makes

it perfect for use in circuits working in hard-

switching mode. In particular the VF/QRR trade-off

positions this device between standard ultrafast

diodes and silicon-carbide Schottky rectifiers in

terms of price/performance ratio.

The device offers a new positioning giving more

flexibility to power-circuit designers looking for

good performance while still respecting cost

constraints.

Featuring ST's Turbo 2 600 V technology, the

device is particularly suited as a boost diode in

continuous conduction mode power factor

correction circuits.

Table 1. Device summary

Symbol

Value

IF(AV)

12 A

VRRM

600 V

trr (typ)

15 ns

IRM (typ)

2.3 A

VF (typ)

2.05 V

IFRM

65 A

Tj (max)

175 °C

TO-220AC ins

STTH

DI

12T06

A

K

www.st.com

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