2N1613 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N1613 – 2N1711

24/09/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max

Unit

ICBO

Collector Cutoff Current

VCE=60 V, IE=0

Tamb = 150°C

µA

IEB0

Emitter Cutoff Current

VEB=5 V

2N1613

VEB=5 V

2N1711

VCBO

Collector Base

Breakdown Voltage

IC=0.1 mA

VEBO

Emitter Base Breakdown

Voltage

IE=100 µA , IC=0

VCE(SAT)(*)

Collector-Emitter

saturation Voltage

IC=150 mA , IB=15 mA

1.5

VBE(SAT)(*)

Base-Emitter saturation

Voltage

IC=150 mA, IB=15 mA

1.3

hFE(*)

DC Current Gain

IC=0.1 mA, VCE=10 V

2N1613

IC=10 mA, VCE=10 V

IC=150 mA, VCE=10 V

120

IC=500 mA, VCE=10 V

IC=10 µA, VCE=10 V

2N1711

IC=0.1 mA, VCE=10 V

IC=10 mA, VCE=10 V

IC=150 mA, VCE=10 V

100

300

IC=500 mA, VCE=10 V

Symbol

Ratings

Test Condition(s)

Min Typ

Unit

Transition Frequency

IC=50 mA, VCE=10

V, f= 100MHz

2N1613

MHz

2N1711

CCBO

Collector-Base

Capacitance

IE= 0, VCB= 10 V, f = 1MHz

CEBO

Emitter-Base

Capacitance

IC= 0, VEB= 0.5V, f = 1MHz

Noise Figure

IC= 0.3 mA, VCE= 10 V

f = 1 kHz, R9= 510 Ω

2N1613

IC= 0.3 mA, VCE= 10 V

f = 1 kHz, R9= 510 Ω

2N1711

(*) Pulse conditions : tp < 300

µs, δ =2%.

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