2N2484 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N2484

15/10/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

VCB=45 V, IE=0

ICBO

Collector Cutoff Current

VCB=45 V, IE=0

Tj=150°C

µA

IEBO

Emitter Cutoff Current

VBE=5.0 V, IC=0

VCEO (*)

Collector Emitter Breakdown

Voltage

IC=10 mA, IB=0

VCBO

Collector Base Breakdown

Voltage

IC=10 µA, IE=0

VEBO

Emitter Base Breakdown

Voltage

IE=10 µA, IC=0

hFE (*)

DC Current Gain

IC=1 µA, VCE =5 V

200

IC=10 µA, VCE =5 V

100

290

500

IC=100 µA, VCE =5 V

175

375

IC=500 µA, VCE =5 V

200

430

IC=1mA, VCE =5 V

250

450

IC=10 mA, VCE =5 V

430

800

IC=10 µA, VCE =5 V

Tamb = -55°

VCE(SAT)

Collector-Emitter saturation

Voltage

IC=1 mA, IB=0.1 mA

0.2

0.35

VBE

Base-Emitter Voltage

IC=100 µA, VCE =5 V

0.5

0.57

0.7

Transition frequency

IC=50 µA, VCE= 5 V

f= 5 MHz

MHz

IC=500 µA, VCE= 5 V

f= 30 MHz

hfe

Small signal current gain

IC=1 mA, VCE=5.0 V

f= 1 KHz

150

400

900

CCBO

Collector-Base Capacitance

IE= 0 ,VCB=5 V

f = 1MHz

3.5

CEBO

Emitter-Base Capacitance

IC= 0 ,VEB=0.5 V

f = 1MHz

3.5

Noise figure

IC= 0

VCE=5.0 V

Rg = 10 kΩ

f = 100 Hz

f = 1 kHz

1.8

f = 10 kHz

0.6

f = 10 to

10000 Hz

1.8

(*) Pulse conditions : tp < 300

µs, δ =1%

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