2N2646 – 2N2647

24/09/2012

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COMSET SEMICONDUCTORS

SILICON UNIJUNCTION TRANSISTORS

Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point

current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these

devices are much faster switches.

The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary

importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications

where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where

a low emitter leakage current and a low peak point emitter current (trigger current) are required and also

for triggering high power SCR’s.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

2N2646 – 2N2647

Unit

Emitter-Base2 Voltage

30

V

RMS Emitter Current

50

mA

Peak Pulse Emitter Current *

2

A

Interbase Voltage

35

V

RMS power Dissipation

300

mW

Junction Temperature

-65 to +125

°C

Storage Temperature

-65 to +150

°C

Capacitor discharge – 10µF or less, 30volts or less.

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Min.

Typ.

Max.

Unit

η

Intrinsic stand-off ratio

2N2646

0.56

-

0.75

-

2N2647

0.68

-

0.82

4.7

-

9.1

K

Ω

Emitter Saturation Voltage

-

-

2.5

V

Modulated Interbase Current

-

15

-

V

Emitter Revers Current

-

-

12

µA

Base 1 Emitter breakdown Voltage

30

-

-

V

2N2646

4

-

-

mA

2N2647

8

-

-

2N2646

-

-

5

µA

2N2647

-

-

2