2N2894 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N2894

15/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

VCB =-6 V, IE =0V

Tj =125°C

-10

µA

ICES

Collector Cutoff Current

VBE =0 V, VCE =-6 V

-80

VCEO (*)

Collector Emitter Breakdown

Voltage

IC =-10 mA, IB =0

-12

VCES

Collector Emitter Breakdown

Voltage

VBE =0 V, IC =-10 µA

-12

VCBO

Collector Base Breakdown

Voltage

IC =-10 µA, IE =0

-12

VEBO

Emitter Base Breakdown

Voltage

IE =-100 µA, IC =0

-4

hFE (*)

DC Current Gain

IC =-10 mA, VCE =-0.3 V

IC =-30 mA, VCE =-0.5 V

150

IC =-100 mA, VCE =-1 V

IC =150 mA, VCE =10 V

Tamb = -55°

VCE(SAT) (*)

Collector-Emitter saturation

Voltage

IC =-10 mA, IB =-1 mA

-0.15

IC =-30 mA, IB =-3 mA

-0.2

IC =-100 mA, IB =-10 mA

-0.5

VBE(SAT) (*) Base-Emitter saturation Voltage

IC =-10 mA, IB =-1 mA

-0.78

-0.98

IC =-30 mA, IB =-3 mA

-0.85

-1.2

IC =-100 mA, IB =-10 mA

-1.7

Transition frequency

IC =-30 mA, VCE =-10 V

f = 100MHz

400

MHz

CCBO

Collector-Base Capacitance

IE = 0 ,VCB =-5 V

f = 1MHz

CEBO

Emitter-Base Capacitance

IC = 0 ,VEB =-0.5 V

f = 1MHz

ton

Turn-on Time

IC =-30 mA, VCC =-2 V

IB1 = -1.5mA

toff

Turn-off Time

IC =-30 mA, VCC =-2 V

IB1 = -IB2 = -1.5mA

(*) Pulse conditions : tp < 300

µs, δ =1%

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