2N3227 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N3227

16/10/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off current

IE = 0 ; VCB = 20V

0.2

µA

IE = 0 ; VCB = 20V

TA = 150°C

ICEX

Collector cut-off curren

VCE = 20V ; VEB(off) = 3V

0.2

IBL

Base cut-off curren

VCE = 20V ; VEB(off) = 3V

0.5

BVCBO

Collector-Base Breakdown

voltage

IC =10 µA ; IB = 0

BVEBO

Emitter-Base Breakdown

voltage

IE =10 µA ; IC = 0

BVCEO

Collector-Emitter Breakdown

voltage

IC = 10 mA

BVCES

Collector-Emitter voltage

IC =10 µA ; IB = 0

VCE(SAT)

Collector-Emitter saturation

Voltage

IC=10 mA, IB=1.0 mA

0.25

IC=100 m A, IB=10 mA

0.45

VBE(SAT)

Base-Emitter saturation Voltage

IC=10 mA, IB=1.0 mA

0.85

IC=100 m A, IB=10 mA

1.4

hFE

DC Current Gain

VCE=1.0 V, IC=10 mA

100

300

VCE=1.0 V, IC=10 mA

TA =-55°c

VCE=1.0 V, IC=100 mA

hfe

Small Signal Current Gain

VCE=10 V, IC=10 mA

f=100MHz

Storage time

IC = IB1 = IB2 =10 mA

Toff

Turn-off time

IC=10 A;IB1= 3 mA;

IB2 =1.5 mA;VCC=3.0 V

ton

Turn-on time

IC=10 A;IB1= 3 mA

VCC=3.0 V, VEB(off) = 1.5

Cob

Output Capacitance

VCB=5

V ;

IE=0

f=140kHz

4.0

Cib

Input Capacitance

VBE=1

V ;

IC=0

f=140kHz

4.0

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