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2N3583 Datasheet(PDF) 1 Page - Comset Semiconductor

Part # 2N3583
Description  NPN SILICON POWER TRANSISTORS.
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N3583 Datasheet(HTML) 1 Page - Comset Semiconductor

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NPN 2N3583 – 2N3584 – 2N3585
17/10/2012
COMSET SEMICONDUCTORS
1 | 3
NPN SILICON POWER TRANSISTORS.
The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case.
They are designed for high-speed switching and linear amplifier application for high-voltage
operational amplifiers, switching regulators, converters,deflection stages and high fidelity
amplifiers.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCBO
Collector-Base Voltage (IE= 0)
2N3583
250
V
2N3584
330
2N3585
440
VCEO
Collector-Emitter Voltage (IB= 0)
2N3583
175
V
2N3584
250
2N3585
300
VEBO
Emitter-Base Voltage (IC= 0)
6
V
IC
Collector Current
2N3583
1
A
2N3584
2
2N3585
2
ICM
Peak Collector
Current
tp = 10ms
5
A
IB
Base current
1
A
PT
Total power
Dissipation
@ Tmb = 70°C
35
W
TJ
Junction Temperature
200
°C
TStg
Storage Temperature
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJC
Thermal Resistance, Junction to Case
5
°C/W
RthJA
Thermal Resistance, Junction to ambient in free air
87.5


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