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2N3583 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N3583 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN 2N3583 – 2N3584 – 2N3585 17/10/2012 COMSET SEMICONDUCTORS 1 | 3 NPN SILICON POWER TRANSISTORS. The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage (IE= 0) 2N3583 250 V 2N3584 330 2N3585 440 VCEO Collector-Emitter Voltage (IB= 0) 2N3583 175 V 2N3584 250 2N3585 300 VEBO Emitter-Base Voltage (IC= 0) 6 V IC Collector Current 2N3583 1 A 2N3584 2 2N3585 2 ICM Peak Collector Current tp = 10ms 5 A IB Base current 1 A PT Total power Dissipation @ Tmb = 70°C 35 W TJ Junction Temperature 200 °C TStg Storage Temperature -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, Junction to Case 5 °C/W RthJA Thermal Resistance, Junction to ambient in free air 87.5 |
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Similar Description - 2N3583 |
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