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2N3789 Datasheet(PDF) 3 Page - Comset Semiconductor |
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2N3789 Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 4 page ![]() PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 05/11/2012 COMSET SEMICONDUCTORS 3 | 4 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VBE(SAT) Base-Emitter saturation Voltage (*) (**) IC=-5 A, IB=-0.5 A 2N3789 - - -2 V 2N3790 2N3791 - - -1.5 2N3792 VBE Base-Emitter Voltage (*) (**) IC=-3 A, VCE=-2V 2N3789 - - -1.5 V 2N3790 hfe Small Signal Current Gain VCE=-10 V, IC=-0.5 A f=1.0 kHz 2N3789 25 - 250 - 2N3790 2N3791 2N3792 VCE=-10 V, IC=-0.5 A f=1.0 MHz 2N3789 4 - 4 - 2N3790 2N3791 2N3792 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (**) These parameters are measured with voltage sensing contacts separate from the current carrying contacts |
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