2N3713 datasheet(2/4 Pages) COMSET

2 / 4 page

NPN 2N3713 – 2N3714 – 2N3715 – 2N3716

05/11/2012

COMSET SEMICONDUCTORS

2 | 4

ELETRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(BR)

Collector-Emitter

Breakdown Voltage

IC=200 mA, IB=0 (*)

2N3713

2N3715

2N3714

2N3716

VCEO(SUS)

Collector-Emitter

Sustaining Voltage (*)

IC=200 mA, IB=0 (*)

2N3713

2N3715

2N3714

2N3716

ICEO

Collector-Emitter

Current

VCE=30 V, IB=0

2N3713

0.7

2N3715

VCE=40 V, IB=0

2N3714

0.7

2N3716

ICEV

Collector Cutoff Current

VCE=80 V, VEB=-1.5 V

2N3713

2N3715

VCE=100 V, VEB=-1.5 V

2N3714

2N3716

VCE=60 V, VEB=-1.5 V

TC = 150°C

2N3713

2N3715

VCE=80 V, VEB=-1.5 V

TC = 150°C

2N3714

2N3716

IEBO

Emitter Cutoff Current

VBE=7 V, IC=0

2N3713

2N3714

2N3715

2N3716

hFE

DC Current Gain (*) (**)

IC=1 A, VCE=2 V

2N3713

2N3714

2N3715

150

2N3716

IC=3 A, VCE=2 V

2N3713

2N3714

2N3715

2N3716

IC=10 A, VCE=4 V

2N3713

2N3714

2N3715

2N3716

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

(**)

IC=5 A, IB=0.5 A

2N3713

2N3714

2N3715

0.8

2N3716

2N3713 Datasheet(PDF) 2 Page - Comset Semiconductor

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