2N3791 datasheet(2/4 Pages) COMSET

2 / 4 page

PNP 2N3789 – 2N3790 – 2N3791 – 2N3792

05/11/2012

COMSET SEMICONDUCTORS

2 | 4

ELETRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(BR)

Collector-Emitter

Breakdown Voltage

IC=-200 mA, IB=0 (*)

2N3789

-60

2N3791

2N3790

-80

2N3792

VCEO(SUS)

Collector-Emitter

Sustaining Voltage (*)

IC=-200 mA, IB=0 (*)

2N3789

-60

2N3791

2N3790

-80

2N3792

ICEO

Collector-Emitter

Current

VCE=-30 V, IB=0

2N3789

-0.7

2N3791

VCE=-40 V, IB=0

2N3790

-0.7

2N3792

ICEV

Collector Cutoff Current

VCE=-80 V, VEB=1.5 V

2N3789

-1

2N3791

VCE=-100 V, VEB=1.5 V

2N3790

-1

2N3792

VCE=-60 V, VEB=1.5 V

TC = 150°C

2N3789

-10

2N3791

VCE=-80 V, VEB=1.5 V

TC = 150°C

2N3790

-10

2N3792

IEBO

Emitter Cutoff Current

VBE=-7 V, IC=0

2N3713

-5

2N3714

2N3715

2N3716

hFE

DC Current Gain (*) (**)

IC=-1 A, VCE=-2 V

2N3789

2N3790

2N3791

150

2N3792

IC=-3 A, VCE=-2 V

2N3789

2N3790

2N3791

2N3792

IC=-10 A, VCE=-4 V

2N3789

2N3790

2N3791

2N3792

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

(**)

IC=-5 A, IB=-0.5 A

2N3791

-1

2N3792

2N3791 Datasheet(PDF) 2 Page - Comset Semiconductor

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