1

MRF842

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

RF Power Transistor

. . . designed for 12.5 volt UHF large–signal, common–base amplifier applica-

tions in industrial and commercial FM equipment operating in the range of

806 – 960 MHz.

• Specified 12.5 Volt, 870 MHz Characteristics

Output Power = 20 Watts

Power Gain = 6.0 dB Min

Efficiency = 50% Min

• Series Equivalent Large–Signal Characterization

• Internally Matched Input for Broadband Operation

• 100% Tested for Load Mismatch Stress at All Phase Angles with 20:1

VSWR @ 15.5 Volt Supply and 50% RF Overdrive

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Silicon Nitride Passivated

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

16

Vdc

Collector–Base Voltage

VCBO

36

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

7.6

Adc

Total Device Dissipation @ TC = 25°C (1)

Derate above 25

°C

PD

80

0.64

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (2)

R

θJC

1.5

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, IB = 0)

V(BR)CEO

16

—

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

V(BR)CES

36

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

—

—

Vdc

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

ICBO

—

—

5.0

mAdc

NOTES:

(continued)

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Order this document

by MRF842/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF842

20 W, 870 MHz

RF POWER

TRANSISTOR

NPN SILICON

CASE 319–07, STYLE 1

REV 6