BD130 datasheet(2/3 Pages) COMSET

Part #	BD130

Description	SILICON TRANSISTOR HOMOBASE

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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2 / 3 page

NPN BD130

15/11/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(BR)

Collector-Emitter Breakdown

Voltage (*)

IC=200 mA, IB=0

VCE(SAT)

Collector-Emitter Saturation

Voltage (*)

IC=4 A, IB=0.4 A

0.5

1.1

ICEX

Collector-Emitter Cutoff Current

VCE=100 V, VBE=-1.5 V

0.5

VCE=100 V, VBE=-1.5 V

TCASE=150°C

IEBO

Emitter-Base Cutoff Current

VEB=7 V

5.0

VBE

Base-Emitter Voltage (*)

IC=4.0 A, VCE=4.0V

0.95

1.8

Transition Frequency

IC=0.1 A, VCE=4 V

1.1

MHz

h21E

Static Forward Current Transfer

Ratio (*)

VCE=4.0 V, IC=4.0 A

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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