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BD643 Datasheet(PDF) 3 Page - Comset Semiconductor |
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BD643 Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 5 page  BD643 – 645 – 647 – 649 – 651 17/10/2012 COMSET SEMICONDUCTORS 3 | 5 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current IE=0,VCB =VCEOMax BD643 - - 0.2 mA BD645 BD647 BD649 BD651 IE=0,VCB =1/2 VCBOMax TJ=150°C BD643 - - 2 mA BD645 BD647 BD649 BD651 ICEO Collector Cutoff Current IE=0, VCE =1/2 VCEOMax BD643 - - 0.5 mA BD645 BD647 BD649 BD651 IEBO Emitter Cutoff Current VEB=5 V, IC=0 BD643 - - 5.0 mA BD645 BD647 BD649 BD651 VCEO Collector-Emitter Breakdown Voltage IC=30 mA, IB= 0 BD643 45 - - V BD645 60 - - BD647 80 - - BD649 100 - - BD651 120 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC=4 A, IB=16 mA BD643 - - 2 V IC=3 A, IB=12 mA BD645 - - 2 BD647 BD649 BD651 IC=5 A, IB=50 mA BD643 - - 2.5 BD645 BD647 BD649 BD651 VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=50 mA BD643 - - 3 V BD645 BD647 BD649 BD651 |
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