2SC3052 datasheet(1/4 Pages) ISAHAYA

Part #	2SC3052

Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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〈SMALL-SIGNAL TRANSISTOR〉

2SC3052

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE(mini type)

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

2SC3052 is a mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for low frequency voltage application.

.

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

APPLICATION

For Hybrid IC,small type machine low frequency voltage

Amplify application.

※） It shows hFE classification at right table.

OUTLINE DRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

V

CBO

Collector to Base voltage

50

V

CEO

Collector to Emitter voltage

50

V

EBO

Emitter to Base voltage

6

V

I

O

Collector current

200

mA

P

c

Collector dissipation

200

mW

T

j

Junction temperature

＋150

℃

T

stg

Storage temperature

-55∼＋150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

C to E break down voltage

V(BR)CEO

I

C=100μA ,R BE=∞

50

-

V

Collector cut off current

ICBO

V

CB=50V, I E=0mA

-

0.1

μA

Emitter cut off current

IEBO

V

EB=6V, I C=0mA

-

0.1

μA

DC forward current gain

hFE

V

CE=6V, I C=1mA

※

150

-

500

DC forward current gain

hFE

V

CE=6V, I C=0.1mA

90

-

C to E Saturation Vlotage

VCE(sat)

I

C=100mA ,IB=10mA

-

0.3

V

Gain bandwidth product

fT

V

CE=6V, I E=-10mA

-

200

-

MHz

Collector output capacitance

Cob

V

CB=6V, I E=0,f=1MHz

-

2.5

-

pF

Noise figure

NF

V

CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ

-

15

dB

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

Item

E

F

hFE Item

150∼300

250∼500

JEITA：SC-59

JEDEC：Similar to TO-236

Type name

hFE Item

L F

MARKING

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