BDX34 datasheet(3/4 Pages) COMSET

Part #	BDX34

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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3 / 4 page

PNP BDX34 – BDX34A – BDX34B – BDX34C

23/10/2012

COMSET SEMICONDUCTORS

3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector-Base Cutoff

Current

VCBO=-45 V

TC=100°C

BDX34

-5

VCBO=-60 V

TC=100°C

BDX34A

VCBO=-80 V

TC=100°C

BDX34B

VCBO=-100 V

TC=100°C

BDX34C

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=-4.0 A, IB=-8.0 mA

BDX34

-2.5

BDX34A

BDX34B

BDX34C

IC=-3.0 A, IB=-6.0 mA

BDX34

-2.5

BDX34A

BDX34B

BDX34C

Forward Voltage (pulse

method)

IF=-8 A

BDX34

4.0

BDX34A

BDX34B

BDX34C

VBE

Base-Emitter Voltage (*)

IC=-4.0 A, VCE=-3.0V

BDX34

-2.5

BDX34A

IC=-3.0 A, VCE=-3.0V

BDX34B

-2.5

BDX34C

hFE

DC Current Gain (*)

VCE=-3.0 V, IC=-4.0 A

BDX34

750

BDX34A

VCE=-3.0 V, IC=-3.0 A

BDX34B

750

BDX34C

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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