BDX64B datasheet(2/4 Pages) COMSET

2 / 4 page

BDX64 – A – B – C

24/10/2012

COMSET SEMICONDUCTORS

2 | 4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Breakdown

Voltage (*)

IC=-0.1 A

IB=0

L=25mH

BDX64

-60

BDX64A

-80

BDX64B

-100

BDX64C

-120

ICEO

Collector Cutoff Current

VCE=-30 V

BDX64

-1.0

VCE=-40 V

BDX64A

VCE=-50 V

BDX64B

VCE=-60 V

BDX64C

IEBO

Emitter Cutoff Current

VBE=-5 V

BDX64

-5.0

BDX64A

BDX64B

BDX64C

ICBO

Collector-Base Cutoff Current

VCBO=-60 V

BDX64

0.2

VCBO=-40 V

TCASE=200°C

VCBO=-80 V

BDX64A

0.2

VCBO=-50 V

TCASE=200°C

VCBO=-100 V

BDX64B

0.2

VCBO=-60 V

TCASE=200°C

VCBO=-120 V

BDX64C

0.2

VCBO=-70 V

TCASE=200°

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=-5.0 A

IB=-20 mA

BDX64

-2

BDX64A

BDX64B

BDX64C

Forward Voltage (pulse

method)

IF=5 A

BDX64

1.8

BDX64A

BDX64B

BDX64C

VBE

Base-Emitter Voltage (*)

IC=-5.0 A

VCE=-3V

BDX64

-2.5

BDX64A

BDX64B

BDX64C

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