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BDX66B Datasheet(PDF) 3 Page - Comset Semiconductor |
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BDX66B Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 4 page  BDX66 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 3/4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=10 A -IB=40 mA BDX66 - - 2 V BDX66A BDX66B BDX66C -VBE Base-Emitter Voltage(1&2) -VCE=3 V -IC=10 A BDX66 - - 2,5 V BDX66A BDX66B BDX66C VF Diode forward voltage IF=10 A BDX66 - 2 - V BDX66A BDX66B BDX66C C22b IE=0 A, -VCB=-10V f=1 MHz - 300 - pF ton Switching characteristics VCC=12V, -IC=10 A -IB1= IB2=40 mA - 1 - µs toff - 3.5 - fhfe -VCE=3 V,-IC=5 A BDX66 - 60 - kHz BDX66A BDX66B BDX66C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
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