BDX67C datasheet(3/4 Pages) COMSET

3 / 4 page

BDX67 – A – B – C

05/10/2012

COMSET SEMICONDUCTORS

3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector-Base Cutoff

Current

TCASE=25°C

VCB=100 V

BDX67B

TCASE=200°C

VCB=60 V

TCASE=25°C

VCB=120 V

BDX67C

TCASE=200°C

VCB=70 V

hFE

Dc Current Gain

VCE=3 V, IC=1 A

5200

VCE=3 V, IC=10 A

1000

VCE=3 V, IC=16 A

4000

VCE(SAT)

Collector-Emitter

Saturation Voltage (*)

IC=10 A

IB=40 mA

BDX67

BDX67A

BDX67B

BDX67C

VBE

Base-Emitter Voltage(1&2)

VCE=3 V

IC=10 A

BDX67

2,5

BDX67A

BDX67B

BDX67C

Diode Forward Voltage

IF=10 A

BDX67

2,5

BDX67A

BDX67B

BDX67C

Collector Capacitance

IE=0 A

VCB=10V

BDX67

300

BDX67A

BDX67B

BDX67C

ton

Switching Characteristics

VCC=12V

IC=-10 A

IB1=- IB2=0.04 A

BDX67

µs

BDX67A

BDX67B

BDX67C

toff

BDX67

3.5

BDX67A

BDX67B

BDX67C

fhfe

Small Signal Current Gain

VCE=-3 V

IC=-5 A

BDX67

kHz

BDX67A

BDX67B

BDX67C

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

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