BDY57 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BDY57 – BDY58

09/11/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=100 mA, IB=0

BDY57

BDY58

125

V(BR)CBO

Collector-Base

Breakdown Voltage (*)

IC=5.0mA, IE=0

BDY57

120

BDY58

160

V(BR)EBO

Emitter-Base Breakdown

Voltage (*)

IE=5.0 A, IC=0

BDY57

0.5

1.4

BDY58

ICBO

Collector-Base Cutoff

Current

VCB=120 V, IE=0 V

BDY57

1.0

BDY58

0.5

ICER

Collector-Emitter Cutoff

Current

VCE=80 V, RBE=10

TCASE=100°C

BDY57

BDY58

IEBO

Emitter-Base Cutoff

Current

VEB=10 V, IC=0 V

BDY57

0.25

0.5

BDY58

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC=10 A, IB=1.0 A

BDY57

0.5

1.4

BDY58

h21E

Static Forward Current

transfer ratio (*)

VCE=4 V, IC=10 A

BDY57

BDY58

VCE=4 V, IC=20 A

BDY57

BDY58

VCE=4 V, IC=10 A

TCASE=-30°C

BDY57

BDY58

Transition Frequency

VCE=15 V, IC=1.0 A

f=10 MHz

BDY57

MHz

BDY58

td + tr

Turn-on time

IC=15 A, IB=1.5 A

BDY57

0.25

µs

BDY58

ts + tf

Turn-off time

IC=15 A, IB1=1.5 A

IB2=-1.5 A

BDY57

µs

BDY58

(*) Pulse Width ≈ 300 µs, Duty Cycle

∠ 2.0%

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