BUX11 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BUX11

25/10/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC=200 mA

200

VEB0(SUS)

Emitter-Base Breakdown

Voltage (*)

IC=0A , IE=50 mA

ICEO

Collector Cutoff Current

VCE=160 V , IB=0A

1.5

ICEX

Collector Cutoff Current

VCE= VCEX , VBE= -1.5V

1.5

VCE= VCEX , VBE= -1.5V

Tcase = 125°C

IEBO

Emitter Cutoff Current

VEB=5.0 V, IC=0

hFE

DC Current Gain (*)

IC=6 A , VCE=2.0 V

IC=12 A , VCE=4.0 V

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=6 A , IB=0.6 A

0.3

0.6

IC=12 A , IB=1.5 A

0.6

1.5

VBE(SAT)

Base-Emitter saturation Voltage

(*)

IC=12 A , IB=1.5 A

1.3

1.5

IS/B

Second breakdown collector

current

VCE=30 V , ts = 1s

VCE=140 V , ts = 1s

0.15

ES/B

Clamped ES/B Collector current

Vclamp=200 V , L=500 µH

Transition frequency

VCE=15 V , IC=1 A

f=10 MHz

MHz

ton

Turn-on time

IC=12 A , IB=1.5 A

VCC=150 V

0.3

1.0

µs

Storage time

IC=12 A , VCC=150 V

IB1 = -IB2 =1.5 A

1.2

1.8

File time

0.24

0.4

(*) Pulse Duration = 300

µs, Duty Cycle <= 2%

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