2SC5633 datasheet(1/2 Pages) ISAHAYA

Part #	2SC5633

Description	FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

PDF	2 Pages

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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1 / 2 page

DESCRIPTION

2SC5633 is a super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for high voltage application.

FEATURE

●Low collector to emitter saturation voltage.

VCE(sat)=0.5V max

●Super mini package for easy mounting

APPLICATION

For Hybrid IC, DC-DC converter

〈SMALL-SIGNAL TRANSISTOR〉

2SC5633

FOR HIGH FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit：ｍｍ

Note)

The dimension without tolerance represent central value.

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

V

CBO

Collector to Base voltage

300

V

CEO

Collector to Emitter voltage

300

V

EBO

Emitter to Base voltage

7

V

I

O

Collector current

100

mA

P

c

Collector dissipation

500

mW

T

j

Junction temperature

＋150

℃

T

stg

Storage temperature

-55～＋150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

C to B break down voltage

V(BR)CBO

I

C=50μA ,I E=0

300

-

V

E to B break down voltage

V(BR) EBO

I

E=50μA ,I C=0

7

-

V

C to E break down voltage

V(BR)CEO

I

C=1mA ,R BE=∞

300

-

V

Collector cut off current

ICBO

V

CB=300V, I E=0mA

-

0.5

μA

Emitter cut off current

IEBO

V

EB=5V, I C=0mA

-

0.5

μA

DC forward current gain

hFE

V

CE=10V, I C=10mA

60

-

305

C to E Saturation Vlotage

VCE(sat)

I

C=100mA ,IB=10mA

-

0.5

V

Gain bandwidth product

fT

V

CE=6V, I E=-10mA

-

40

-

MHz

Collector output capacitance

Cob

V

CB=6V, I E=0,f=1MHz

-

3.0

-

pF

ISAHAYA ELECTRONICS CORPORATION

TERMINAL CONNECTER

Ｅ: EMITTER

Ｃ: COLLECTOR

Ｂ: BASE

EIAJ : SC-62

JEDEC :

E

C

B

4.6 MAX

1.6

3.0

1.5

0.53

MAX

0.48 MAX

1.5

0.4

MARKING

ＡＪ

Ｑ

ｈ

ＦＥ ITEM

TYPE NAME

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