BUX80 datasheet(2/3 Pages) COMSET

Part #	BUX80

Description	HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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2 / 3 page

NPN BUX80

26/10/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (*)

IC=100 mA

400

VCER

Collector-Emitter Sustaining

Voltage (*)

IC=100 mA

RBE = 50Ω

500

IEBO

Emitter Cutoff Current

VCE=10 V, IC=0

ICES

Collector Cutoff Current

VCE= VCES, VBE= 0

Tcase = 125°C

hFE

DC Current Gain (*)

IC=1.2 A, VCE=5.0 V

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=5 A, IB=1 A

1.5

IC=8 A, IB=2.5 A

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC=5 A, IB=1 A

1.4

IC=8 A, IB=2.5 A

1.8

ton

Turn-on time

IC=5 A, IB=1 A

VCC=250 V

0.5

µs

Storage time

IC=5 A, VCC=250 V

IB1 =1A, -IB2 =2 A

3.5

File time

IC=5 A, VCC=-250 V

IB1 =1A, -IB2 =2 A

0.5

(*) Pulse Duration = 300

µs, Duty Cycle <= 1.5%

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