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BUX98 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BUX98 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() NPN BUX98 26/10/2012 COMSET SEMICONDUCTORS 2/3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Sustaining Voltage (*) IC =100 mA 700 - - V ICER Collector Cutoff Current VCE = VCES , RBE = 10Ω - - 1 mA VCE = VCES , RBE = 10Ω TCASE = 125°C - - 8 ICEO Collector Cutoff Current VCE = VCEO , IB =0A - - 2 mA ICES Collector Cutoff Current VCE = VCES , VBE = 0 - - 1 mA VCE = VCES , VBE = 0 TCASE = 125°C - - 6 IEBO Emitter Cutoff Current VEB =5.0 V, IC=0 - - 2 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC =12 A , IB =3 A - - 1.5 V IC =16 A , IB =5 A - - 2 IC =20 A , IB =8 A - - 3 VBE(SAT) Base-Emitter saturation Voltage (*) IC =12 A , IB =3 A - - 1.6 IC =20 A , IB =8 A - - 2 ton Turn-on time RESISTIVE LOAD IC=8 A , IB=1 A VCC=150 V IC=12 A , VCC=250 V IB1 = -IB2 =3 A - 0.5 1 µs ts Storage time - 1.5 3 tf File time - 0.2 0.8 (*) Pulse Duration = 300 µs, Duty Cycle ≤ 1.5% |
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