MJ900 – MJ901 PNP

29/10/2012

COMSET SEMICONDUCTORS

1 | 3

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic

Darlington configuration, and are mounted in JEDEC TO-3 metal case.

They are intended for use in power linear and switching applications.

Their complementary NPN types are the MJ1000 and MJ1001 respectively.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Base Voltage

MJ900

-60

V

MJ901

-80

Collector-Emitter

Voltage

MJ900

-60

V

MJ901

-80

Emitter-Base Voltage

MJ900

-5.0

V

MJ901

Collector Current

MJ900

-8.0

A

MJ901

Base Current

MJ900

-0.1

A

MJ901

Power Dissipation

MJ900

90

W

Derate above 25°C

MJ901

0.515

W/°C

Junction Temperature

MJ900

-65 to +200

°C

MJ901

Storage Temperature

MJ900

MJ901

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.94

°C/W