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MJ2500 Datasheet(PDF) 1 Page - Comset Semiconductor |
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MJ2500 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page  PNP MJ2500 – MJ2501 29/10/2012 COMSET SEMICONDUCTORS 1 | 3 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage IE=0 MJ2500 -60 V MJ2501 -80 VCEO Collector-EmitterVoltage IB=0 MJ2500 -60 V MJ2501 -80 VEBO Emitter-Base Voltage IC=0 MJ2500 -5.0 V MJ2501 IC Collector Current MJ2500 -10 A MJ2501 IB Base Current MJ2500 -0.2 A MJ2501 PT Power Dissipation @ TC < 25° MJ2500 150 W MJ2501 TJ Junction Temperature MJ2500 200 °C Ts Storage Temperature MJ2501 -65 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W |
Similar Part No. - MJ2500 |
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Similar Description - MJ2500 |
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