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MJ3000 Datasheet(PDF) 1 Page - Comset Semiconductor |
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MJ3000 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page  PNP MJ3000 – MJ3001 29/10/2012 COMSET SEMICONDUCTORS 1 | 3 COMPLEMENTARY POWER DARLINGTONS The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP types are the MJ2500 and MJ2501 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage IE=0 MJ3000 60 V MJ3001 80 VCEO Collector-EmitterVoltage IB=0 MJ3000 60 V MJ3001 80 VEBO Emitter-Base Voltage IC=0 MJ3000 5.0 V MJ3001 IC Collector Current MJ3000 10 A MJ3001 IB Base Current MJ3000 0.2 A MJ3001 PT Power Dissipation @ TC < 25° MJ3000 150 W MJ3001 TJ Junction Temperature MJ3000 200 °C Ts Storage Temperature MJ3001 -65 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W |
Similar Part No. - MJ3000 |
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Similar Description - MJ3000 |
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