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INA6002AC1 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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INA6002AC1 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 3 page ![]() Notice : This is not a final specification. Some parametric subject to change. <SMALL-SIGNAL TRANSISTOR> INA6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION PRELIMINARY TYPCAL CHARACERISTICS 0 -10 -20 -30 -40 -50 0-5 -10 Collector-Emitter Voltage : VCE (V) Common Emitter Output IB=-0.05mA -2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -0.8mA -0.6mA -0.4mA Ta=25℃ -0.1mA -0.2mA -0.1 -1 -10 -100 0 -0.2 -0.4 -0.6 -0.8 -1 Base-Emitter Voltage : VBE (V) Common Emitter Transfer Ta=125℃ 75℃ 25℃ -25℃ Ta=25℃ VCE=-10V 1 10 100 1000 -0.1 -1 -10 -100 Collector Current : IC (mA) hFE-IC Ta=125℃ 75℃ 25℃ -25℃ Ta=25℃ VCE=-10V -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 Collector Current : IC (mA) VCE(sat)-IC Ta=125℃ 75℃ 25℃ -25℃ Ta=25℃ IC/IB=10 1 10 100 110 100 Emitter Current : IE (mA) fT-IE VCE=-30V -10V -6V Ta=25℃ 1 10 100 -0.1 -1 -10 -100 Collector-Base Voltage : VCB (V) Cob-VCB Ta=25℃ |
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