TIC106D datasheet(2/4 Pages) COMSET

2 / 4 page

TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,

TIC106N, TIC106S

29/10/2012

COMSET SEMICONDUCTORS

2 | 4

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

tgt

Gate-controlled

Turn-on time

VAA = 30 V, RL = 6 Ω

RGK(eff) = 5 kΩ

Vin = 50 V

1.75

µs

Circuit-communicated

Turn-off time

VAA = 30 V, RL = 6 Ω

IRM ≈ 8 A

7.7

R∂JC

Junction to case thermal resistance

≤ 3.5

°C/W

R∂JA

Junction to free air thermal resistance

≤ 62.5

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

IDRM

Repetitive peak off-state current

VD = Rated VDRM

RGK = 1 kΩ, TC = 110°C

400

µA

IRRM

Repetitive peak reverse current

VR = Rated VRRM, IG = 0

TC = 110°C

IGT

Gate trigger current

VAA = 6 V, RL = 100 Ω

tp(g) ≥ 20µs

200

µA

VGT

Gate trigger voltage

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

TC = -40°C

1.2

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

0.4

0.6

VAA = 6 V, RL = 100 Ω

RGK = 1 kΩ, tp(g) ≥ 20µs

TC = 110°C

0.2

Holding current

VAA = 6 V, RGK = 1 kΩ

initiating IT = 10 mA

VAA = 6 V, RGK = 1 kΩ

initiating IT = 10 mA

TC = -40°C

VTM

Peak on-state voltage

ITM = 5A (see Note6)

1.7

dv/dt

Critical rate of rise of off-state

voltage

VD = Rated VD

RGK = 1 kΩ, TC = 110°C

V/µs

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