TIC206N datasheet(2/4 Pages) COMSET

2 / 4 page

TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S

30/10/2012

COMSET SEMICONDUCTORS

2 | 4

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R∂JC

Junction to case thermal resistance

≤ 7.8

°C/W

R∂JA

Junction to free air thermal resistance

≤ 62.5

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

IDRM

Repetitive peak

off-state current

VD = Rated VDRM, , IG = 0

TC = 110°C

±1

IGT

Gate trigger current

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

0.5

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-1.5

-5

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-2

-5

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

3.6

VGT

Gate trigger voltage

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

0.7

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-0.7

-2

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

0.8

Holding current

Vsupply = +12 V†, IG = 0

initiating ITM = 100 mA

Vsupply = -12 V†, IG = 0

initiating ITM = -100 mA

-4

-15

Latching current

Vsupply = +12 V† (seeNote7)

Vsupply = -12 V† (seeNote7)

-30

VTM

Peak on-state

voltage

ITM = ± 4.2 A, IG = 50 mA (see Note6)

±1.3

±2.2

dv/dt

Critical rate of rise of

off-state voltage

VDRM = Rated VDRM, IG = 0

TC = 110°C

±50

V/µs

dv/dt©

Critical rise of

communication

voltage

VDRM = Rated VDRM, ITRM = ± 4.2A

TC = 85°C

±1

±1.3

±2.5

† All voltages are whit respect to Main Terminal 1.

TIC206N Datasheet(PDF) 2 Page - Comset Semiconductor

TIC206N Datasheet(HTML) 2 Page - Comset Semiconductor

Html Pages

1 2 3 4

Datasheet Download

Link URL