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TIC216M Datasheet(PDF) 2 Page - Comset Semiconductor

Part # TIC216M
Description  SILICON TRIACS
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

TIC216M Datasheet(HTML) 2 Page - Comset Semiconductor

  TIC216M Datasheet HTML 1Page - Comset Semiconductor TIC216M Datasheet HTML 2Page - Comset Semiconductor TIC216M Datasheet HTML 3Page - Comset Semiconductor  
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TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
30/10/2012
COMSET SEMICONDUCTORS
2 | 3
SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ Max Unit
IDRM
Repetitive peak
off-state current
VD = Rated VDRM, , IG = 0
TC = 110°C
-
-
±2
mA
IGT
Gate trigger
current
Vsupply = +12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
5
mA
Vsupply = +12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
-5
Vsupply = -12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
-5
Vsupply = -12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
10
VGT
Gate trigger
voltage
Vsupply = +12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
2.2
V
Vsupply = +12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
-2.2
Vsupply = -12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
-2.2
Vsupply = -12 V†, RL = 10 Ω, t
p(g) = > 20 µs
-
-
3
IH
Holding current
Vsupply = +12 V†, IG = 0
initiating ITM = 100 mA
-
-
30
mA
Vsupply = -12 V†, IG = 0
initiating ITM = -100 mA
-
-
-30
IL
Latching current
Vsupply = +12 V† (seeNote7)
-
50
-
mA
Vsupply = -12 V† (seeNote7)
-
-20
-
VTM
Peak on-state
voltage
ITM = ± 8.4 A, IG = 50 mA (see Note6)
-
-
±1.7
V
dv/dt
Critical rate of
rise of off-state
voltage
VDRM = Rated VDRM, IG = 0
TC = 110°C
-
±50
-
V/µs
dv/dt©
Critical rise of
communication
voltage
VDRM = Rated VDRM, ITRM = ± 8.4A
TC = 70°C
±5
-
-
† All voltages are whit respect to Main Terminal 1.
Notes:
1.
These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2.
This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly
to 110°C case temperature at the rate of 150 mA/°C.
3.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
4.
This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
5.
This value applies for a maximum averaging time of 20 ms.
6.
This parameters must be measured using pulse techniques, tW = ≤1µs, duty cycle ≤ 2 %, voltage-
sensing
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8
inch) from de device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.



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