TIC225C datasheet(2/4 Pages) COMSET

2 / 4 page

TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,

TIC225N, TIC225S

30/10/2012

COMSET SEMICONDUCTORS

2 | 4

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R∂JC

Junction to case thermal resistance

≤ 2.5

°C/W

R∂JA

Junction to free air thermal resistance

≤ 62.5

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

IDRM

Repetitive peak

off-state current

VD = Rated VDRM, , IG = 0

TC = 110°C

±2

IGT

Gate trigger

current

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

0.8

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-4.5

-20

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-3.5

-10

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

11.7

VGT

Gate trigger

voltage

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

0.7

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

0.9

Holding current

Vsupply = +12 V†, IG = 0

initiating ITM = 100 mA

Vsupply = -12 V†, IG = 0

initiating ITM = -100 mA

-4.7

-20

Latching current

Vsupply = +12 V† (seeNote7)

Vsupply = -12 V† (seeNote7)

-30

VTM

Peak on-state

voltage

ITM = ± 12 A, IG = 50 mA (see Note6)

±1.6

±2.1

dv/dt

Critical rate of

rise of off-state

voltage

VDRM = Rated VDRM, IG = 0

TC = 110°C

±50

V/µs

dv/dt©

Critical rise of

communication

voltage

VDRM = Rated VDRM, ITRM = ± 12A

TC = 70°C

±1

±1.5

±4.5

† All voltages are whit respect to Main Terminal 1.

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