RJK1054DPB datasheet(2/7 Pages) RENESAS

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RJK1054DPB

Preliminary

R07DS0093EJ0300 Rev.3.00

Page 2 of 6

Apr 11, 2013

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

100

—

ID = 10 mA, VGS = 0 V

Gate to source leak current

IGSS

—

0.1

A

VGS = 20 V, VDS = 0 V

Zero gate voltage drain current

IDSS

—

A

VDS = 100 V, VGS = 0 V

Gate to source cutoff voltage

VGS(off)

2.0

—

4.0

VDS = 10 V, ID = 1 mA

Static drain to source on state resistance

RDS(on)

—



ID = 10 A, VGS = 10 V

Note4

Forward transfer admittance

|yfs|

—

ID = 10 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

2000

—

Output capacitance

Coss

—

350

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0 V,

f = 1 MHz

Gate Resistance

—

0.5

—



Total gate charge

—

Gate to source charge

Qgs

—

9.0

—

Gate to drain charge

Qgd

—

4.5

—

VDD = 50 V, VGS = 10 V,

ID = 20 A

Turn-on delay time

td(on)

—

Rise time

—

3.8

—

Turn-off delay time

td(off)

—

Fall time

—

5.4

—

VGS = 10 V, ID = 10 A,

VDD  30 V, RL = 3 ,

Rg = 4.7



Body–drain diode forward voltage

VDF

—

0.8

1.1

IF = 20 A, VGS = 0 V

Note4

Body–drain diode reverse recovery time

trr

—

IF = 20 A, VGS = 0 V

diF/ dt = 100 A/ s

Notes: 4. Pulse test

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