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ISC4356AS1 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

Part # ISC4356AS1
Description  FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
PDF  4 Pages
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

ISC4356AS1 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation

  ISC4356AS1 Datasheet HTML 1Page - Isahaya Electronics Corporation ISC4356AS1 Datasheet HTML 2Page - Isahaya Electronics Corporation ISC4356AS1 Datasheet HTML 3Page - Isahaya Electronics Corporation ISC4356AS1 Datasheet HTML 4Page - Isahaya Electronics Corporation  
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〈SMALL-SIGNAL TRANSISTOR〉
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
0
200
400
600
800
1000
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(℃)



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