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RJK4012DPE Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJK4012DPE Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 7 page ![]() RJK4012DPE Preliminary R07DS0439EJ0200 Rev.2.00 Page 3 of 6 Jun 21, 2012 Main Characteristics 20 16 12 8 4 0 48 12 16 20 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 1 100 10 1 10 0.1 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source Voltage VDS (V) Maximum Safe Operation Area Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) 02 46 8 10 10 100 0.1 1 0.01 0 0.4 0.2 0.6 0.8 1.0 -25 0 50 2575 100 125 150 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 1 10 100 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) di / dt = 100 A / μs VGS = 0, Ta = 25°C 7 A ID = 15 A VDS = 10 V Pulse Test Tc = 75 °C 25 °C −25°C VGS = 10 V Ta = 25 °C Pulse Test 3.8 A 5.25 V 5 V 5.5 V 5.75 V 6 V VGS = 4.5 V Ta = 25 °C Pulse Test Ta = 25 °C 1 shot Operation in this area is limited by RDS(on) 10 μs PW = 100 μs 7 V 8 V, 10 V VGS = 10 V Pulse Test |
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