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RJF0610DSP Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJF0610DSP Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  RJF0610DSP Target Specifications R07DS0560EJ0200 Rev.2.00 Page 2 of 7 Apr 16, 2012 Typical Operation Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions VIH 3.5 — — V Input voltage VIL — — 1.2 V IIH1 — — 100 A Vi = 5 V, VDS = 0 IIH2 — — 50 A Vi = 3.5 V, VDS = 0 Input current (Gate non shut down) IIL — — 1 A Vi = 1.2 V, VDS = 0 IIH(sd)1 — 0.4 — mA Vi = 8 V, VDS = 0 IIH(sd)2 — 0.24 — mA Vi = 5 V, VDS = 0 Input current (Gate shut down) IIH(sd)3 — 0.16 — mA Vi = 3.5 V, VDS = 0 Shut down temperature Tsd — 175 — C Channel temperature Return temperature Thr — 120 — C Channel temperature Gate operation voltage Vop 3.5 — 12 V Drain current (Current limitation value) ID limit 1.5 — — A VGS = 5 V, VDS = 10 V Note 5 Notes; 5. Pulse test Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ID1 — — 2.4 A VGS = 3.5 V, VDS = 2 V ID2 — — 10 mA VGS = 1.2 V, VDS = 2 V Drain current ID3 1.5 — — — VGS = 5 V, VDS = 10 V Note 6 Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 V(BR)GSS 16 — — V IG = 500 A, VDS = 0 Gate to source breakdown voltage V(BR)GSS –2.5 — — V IG = –100 A, VDS = 0 IGSS1 — — 100 A VGS = 5 V, VDS = 0 IGSS2 — — 50 A VGS = 3.5 V, VDS = 0 IGSS3 — — 1 A VGS = 1.2 V, VDS = 0 Gate to source leak current IGSS4 — — –100 A VGS = –2.4 V, VDS = 0 IGS(OP)1 — 0.4 — mA VGS = 8 V, VDS = 0 IGS(OP)2 — 0.24 — mA VGS = 5 V, VDS = 0 Input current (shut down) IGS(OP)3 — 0.16 — mA VGS = 3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.4 — 2.5 V ID = 1 mA, VDS = 10 V RDS(on) — 207 285 m ID = 0.7 A, VGS = 5 V Note 6 Static drain to source on state resistance RDS(on) — 153 214 m ID = 0.7 A, VGS = 10 V Note 6 Output capacitance Coss — 267 — pF VDS = 10 V, VGS = 0, f = 1MHz Turn-on delay time td(on) — 4.3 — s Rise time tr — 18.3 — s Turn-off delay time td(off) — 0.62 — s Fall time tf — 0.61 — s ID= 0.7 A, VGS = 5 V, RL = 43 Body-drain diode forward voltage VDF — 0.8 — V IF = 1.5 A, VGS = 0 Body-drain diode reverse recovery time trr — 55 — ns IF = 1.5 A, VGS = 0 diF/dt = 50 A/s tos1 — 18 — ms VGS = 5 V, VDD = 16 V Over load shut down operation time Note 7 tos2 — 5.7 — ms VGS = 5 V, VDD = 24 V Notes: 6. Pulse test 7. Including the junction temperature rise of the over loaded condition. |
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