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ADM232LAN Datasheet(PDF) 12 Page - Analog Devices |
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ADM232LAN Datasheet(HTML) 12 Page - Analog Devices |
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12 / 20 page ![]() ADM231L–ADM234L/ADM236L–ADM241L Rev. C | Page 12 of 20 GENERAL INFORMATION The ADM231L–ADM234L/ADM236L–ADM241L family of RS-232 drivers/receivers is designed to solve interface problems by meeting the EIA-232-E specifications while using a single digital 5 V supply. The EIA-232-E standard requires that trans- mitters deliver ±5 V minimum on the transmission channel and that receivers can accept signal levels down to ±3 V. The ADM231L–ADM234L/ADM236L–ADM241L meet these requirements by integrating step-up voltage converters and level-shifting transmitters and receivers onto the same chip. CMOS technology is used to keep the power dissipation to an absolute minimum. A comprehensive range of transmitter/ receiver combinations is available for most communications needs. The ADM236L and ADM241L are particularly useful in battery-powered systems because they feature a low power shutdown mode that reduces power dissipation to less than 5 µW. The ADM233L is designed for applications in which space saving is important because the charge pump capacitors are molded into the package. The ADM231L and ADM239L include only a negative charge pump converter and are intended for applications in which +12 V is available. To facilitate sharing a common line or for connection to a microprocessor data bus, the ADM236L, ADM239L, and ADM241L feature an enable (EN, EN) function. When the receivers are disabled, their outputs are placed in a high impedance state. 1 CH1 CH3 5.00V 5.00V BW CH2 5.00V M50.0 µs CH1 3.1V V+, V– EXITING SD T T T SD V+ V– Figure 26. Charge Pump V+ and V− Exiting Shutdown 1 CH1 5.00V CH2 5.00V M1.00 µs CH1 800mV T T Tx OUTPUT Tx INPUT 2 Figure 27. Transmitter Output Loaded Slew Rate 1 CH1 5.00V CH2 5.00V M1.00 µs CH1 800mV T T Tx OUTPUT Tx INPUT 2 Figure 28. Transmitter Output Unloaded Slew Rate CIRCUIT DESCRIPTION The internal circuitry in the ADM236L to ADM241L consists of three main sections: a charge pump voltage converter, RS-232-to- TTL/CMOS receivers, and TTL/CMOS-to-RS-232 transmitters. Charge Pump DC-to-DC Voltage Converter The charge pump voltage converter consists of an oscillator and a switching matrix. The converter generates a 10 V supply from the 5 V input. This is done in two stages using a switched capacitor technique, as illustrated in Figure 29 and Figure 30. First, the 5 V input supply is doubled to 10 V, using capacitor C1 as the charge storage element. The 10 V level is then inverted to generate –10 V, using C2 as the storage element. S1 S3 V+ = 2VCC S2 S4 INTERNAL OSCILLATOR C1 C3 VCC GND VCC Figure 29. Charge Pump Voltage Doubler S1 S3 S2 S4 INTERNAL OSCILLATOR C2 C4 V+ GND V– = –(V+) + + GND FROM VOLTAGE DOUBLER Figure 30. Charge Pump Voltage Inverter Capacitors C3 and C4 are used to reduce the output ripple. Their values are not critical and can be reduced if higher levels of ripple are acceptable. The charge pump capacitors, C1 and C2, can be reduced at the expense of higher output impedance on the V+ and V– supplies, and the V+ and V– supplies can be used to power external circuitry if the current requirements are small. |
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