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P1P3800AG12CRTWG Datasheet(PDF) 5 Page - ON Semiconductor |
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P1P3800AG12CRTWG Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 7 page ![]() P1P3800A http://onsemi.com 5 Table 3. OPERATING CONDITIONS Symbol Parameter Min Max Unit VDD Supply Voltage 3.8 5.5 V TA Operating Temperature −40 +85 °C CL Load Capacitance 15 pF CIN Input Capacitance 7.0 pF Table 4. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Rating Unit VDD Voltage on VDD pin with respect to Ground −0.5 to +7.0 V VIN Voltage on any input pin with respect to Ground −0.5 to +4.0 V TSTG Storage Temperature −65 to +125 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22−A114−B) 2.0 kV Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 5. DC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit VDD Operating Voltage 3.8 5.0 5.5 V VIL Input Low Voltage (Note 1) GND − 0.3 0.8 V VIH Input High Voltage (Note 1) 1.6 3.0 V IIL Input Low Current 10 mA IIH Input High Current 10 mA VOL Output Low Voltage IOL = 8 mA 0.4 V VOH Output High Voltage IOH = −8 mA VDD − 0.6* V ICC Power Down Current (PD# pulled to GND) 1.0 mA IDD **Dynamic Supply Current, PD# = 5.5 V; S[1:4] = 5.5 V/GND; CLKIN Swing = 0 to 5.5 V; VDD = 5.5 V 1.8 mA Dynamic Supply Current, PD# = 3 V; S[1:4] = 3 V/GND; CLKIN Swing = 0 to 3.0 V 3.0 Dynamic Supply Current, PD# = 3 V; S[1:4] = 1.6 V; CLKIN Swing = 0 to 1.6 V 4.0 Dynamic Supply Current, PD# = S[1:4] = 1.6 V; CLKIN Swing = 0 to 1.6 V 5.0 *For VDD = 5 V, VOH = VDD − 0.4 V. **Indicative value, not a recommended operating condition. 1. Parameter is guaranteed by design and characterization. Not tested in production. |
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