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DTC114TKA Datasheet(PDF) 2 Page - Rohm

Part # DTC114TKA
Description  NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
PDF  10 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

DTC114TKA Datasheet(HTML) 2 Page - Rohm

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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTC114T series
lAbsolute maximum ratings
(Ta = 25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics
(Ta = 25C)
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
IC / IB= 10mA / 1mA
DC current gain
hFE
VCE= 5V , IC= 1mA ,
Input resistance
R1
-
Collector-emitter saturation voltage
VCE(sat)
IE= 50μA
Collector cut-off current
ICBO
VCB = 50V
Emitter cut-off current
IEBO
VEB = 4V
Emitter-base breakdown voltage
BVEBO
MHz
-
250
-
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
-
7
10
13
kW
100
250
600
m
A
-
-
0.3
V
-
-
0.5
V
-
-
0.5
m
A
5
-
-
V
Collector-emitter breakdown voltage
BVCEO IC= 1mA
V
50
-
50
-
-
-
Collector-base breakdown voltage
BVCBO IC= 50μA
Unit
Min.
Typ.
Max.
Parameter
Symbol
Conditions
Tj
150
C
Tstg
-
55 to +150
C
IC
100
mA
DTC114TM
DTC114TEB
DTC114TE
PC *2
150
mW
DTC114TUB
DTC114TUA
DTC114TKA
200
mW
VCEO
50
V
VEBO
5
V
Parameter
Symbol
Values
Unit
VCBO
50
V
2/9
2012.04 - Rev.A



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